Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 235-239

  Hernandez Mangas J M ^a   Arias, J ^a   Marques L A ^a   Ruiz Bueno, A ^a   Bailon L ^a  

^a UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

Computer simulation; Damage accumulation; Ion implantation

Indexed keywords

CRYSTAL-AMORPHOUS TRANSITION; DAMAGE ACCUMULATION; DOSE-RATE; ION IMPLANT SIMULATOR (IIS);

COMPUTER SIMULATION; DEFECTS; DOSIMETERS; ION IMPLANTATION; STATISTICAL METHODS; THERMAL EFFECTS;

RADIATION DAMAGE;

EID: 11344286754     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.050     Document Type: Conference Paper

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