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Volumn 70, Issue 16, 2004, Pages 1-8

Surface diffusion of single vacancies on Ge(111)-c(2 X 8) studied by variable temperature scanning tunneling microscopy [83]

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATED CARBON; GERMANIUM;

EID: 11344281238     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.165410     Document Type: Article
Times cited : (30)

References (53)
  • 38
    • 11944268989 scopus 로고    scopus 로고
    • Ph.D. thesis, Universidad Autónoma de Madrid, Madrid
    • O. Custance, Ph.D. thesis, Universidad Autónoma de Madrid, Madrid, 2002.
    • (2002)
    • Custance, O.1
  • 39
    • 11944258158 scopus 로고    scopus 로고
    • Nanotec Electrónica S.L.
    • Nanotec Electrónica S.L.
  • 40
    • 11944254307 scopus 로고    scopus 로고
    • WSxM free software downloadable from http://www.nanotec.es.
  • 50
    • 11944275689 scopus 로고    scopus 로고
    • note
    • yy. This ensures that the diffusion tensor is diagonal with the chosen basis set.
  • 51
    • 11944275982 scopus 로고    scopus 로고
    • note
    • 3 sites). Accordingly, the full barrier would be expected to be larger than 1.0 eV.
  • 53
    • 11944267501 scopus 로고    scopus 로고
    • note
    • A valuable approximation to this problem has been developed in Ref. 27 . However, this analysis, performed only at RT, relies on the isotropy of the diffusion of single vacancies on Ge(111) -c(2 X 8). The inclusion of anisotropies in the equations worked out by these authors would imply such huge experimental statistics that it becomes, in practice, unfeasible for this reconstruction.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.