Coupled BC/kLMC simulations of the temperature dependence of implant damage formation in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 256-259

  Otto, G ^a   Kovac D ^a   Hobler, G ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

Ion implantation; Monte Carlo; Radiation damage; Silicon

Indexed keywords

BINARY COLLISION (BC); CLUSTERING REACTIONS; POST-IMPLANT ANNEALING; REACTION BARRIERS;

ANNEALING; CHEMICAL REACTIONS; COMPUTER SIMULATION; ION IMPLANTATION; MONTE CARLO METHODS; PARAMETER ESTIMATION; RADIATION DAMAGE; THERMAL EFFECTS;

SILICON;

EID: 11344254695     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.054     Document Type: Conference Paper

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