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Volumn 5256, Issue 1, 2003, Pages 103-111

Implementing AAPSM in 90 nm product with practical image imbalance correction

Author keywords

Alternating aperture PSM; DOF; Image intensity imbalance; Shifter Width bias; SRAM; Undercut

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTROMAGNETIC WAVE TRANSMISSION; ERROR ANALYSIS; ETCHING; IMAGING TECHNIQUES; LIGHT SCATTERING; MASKS; PHASE SHIFT; QUARTZ; SCANNING ELECTRON MICROSCOPY;

EID: 11144356977     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.518029     Document Type: Conference Paper
Times cited : (4)

References (8)
  • 1
    • 0038641945 scopus 로고    scopus 로고
    • Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology
    • A. Kroyan and H-Y Liu, "Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology," Proc. SPIE, Vol. 4889, 2002.
    • (2002) Proc. SPIE , vol.4889
    • Kroyan, A.1    Liu, H.-Y.2
  • 2
    • 0020249292 scopus 로고
    • Improving Resolution in Photolithography with a Phase-Shifting Mask
    • M. D. Levenson et al., "Improving Resolution in Photolithography with a Phase-Shifting Mask," IEEE Transactions on Electron Devices, Vol. ED-29, No. 12, pp. 1828-1836, 1982.
    • (1982) IEEE Transactions on Electron Devices , vol.ED-29 , Issue.12 , pp. 1828-1836
    • Levenson, M.D.1
  • 3
    • 33846593893 scopus 로고    scopus 로고
    • The Application of Alternating Phase-Shifting Masks to 140nm Gate Patterning: Line Width Control Improvements and Design Optimization
    • H-Y Liu et al., "The Application of Alternating Phase-Shifting Masks to 140nm Gate Patterning: Line Width Control Improvements and Design Optimization," SPIE Proc., Vol. 3236, 1997.
    • (1997) SPIE Proc. , vol.3236
    • Liu, H.-Y.1
  • 4
    • 18744367218 scopus 로고    scopus 로고
    • Lithography strategy for 65nm node
    • Y.Borodovsky et al., "Lithography strategy for 65nm node," Proc. SPIE, Vol. 4754, 2002.
    • (2002) Proc. SPIE , vol.4754
    • Borodovsky, Y.1
  • 5
    • 0035185089 scopus 로고    scopus 로고
    • 100nm-Alt.PSM structure discussion for ArF lithography
    • Y. Morikawa et al, "100nm-Alt.PSM structure discussion for ArF lithography," Proc. SPIE, Vol. 4409, 2001.
    • (2001) Proc. SPIE , vol.4409
    • Morikawa, Y.1
  • 6
    • 0028447735 scopus 로고
    • Mask topography effects in projection printing of phase shift masks
    • A. Wong and A. Neureuther, "Mask topography effects in projection printing of phase shift masks," IEEE Trans. Electron. Devices, Vol. 41, p. 895, 1994.
    • (1994) IEEE Trans. Electron. Devices , vol.41 , pp. 895
    • Wong, A.1    Neureuther, A.2
  • 7
    • 0033682543 scopus 로고    scopus 로고
    • Rigorous diffraction analysis for future mask technology
    • A. Erdmann and C. Friedrich, "Rigorous diffraction analysis for future mask technology," Proc. SPIE, Vol. 4000, p. 684, 2000
    • (2000) Proc. SPIE , vol.4000 , pp. 684
    • Erdmann, A.1    Friedrich, C.2
  • 8
    • 1642474051 scopus 로고    scopus 로고
    • Practical approach for AAPSM image imbalance correction for sub-100 nm lithography
    • J. Lin and F. Hsieh "Practical approach for AAPSM image imbalance correction for sub-100 nm lithography" Proc. SPIE, Vol 5130, p. 778, 2003
    • (2003) Proc. SPIE , vol.5130 , pp. 778
    • Lin, J.1    Hsieh, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.