Lithography strategy for 65 nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 1-14

  Borodovsky, Yan ^a   Schenker, R ^a   Allen, G ^a   Tejnil, E ^a   Hwang, D ^a   Lo, F C ^a   Singh, V ^a   Gleason, R ^a   Brandenburg, J ^a   Bigwood, R ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE; LOGIC CIRCUITS; PHASE SHIFT; ULTRAVIOLET RADIATION;

OPTICAL PROXIMITY CORRECTION (OPC);

MASKS;

EID: 18744367218     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.476916     Document Type: Article

References (7)

1. Intel Corporation Press Release, "Intel Builds World's First One Square Micron SRAM Cell," March 12, 2002. http://www.intel.com/pressroom/archive/releases/20020312tech.htm.
2. Ikio Matsukura, "Development of Polymeric Materials for 157 nm, " presented at 157 nm Technical Data Review, December 12-13, 2001, Orlando, Florida, USA.
3. Roger French, "Polymer Pellicle," presented at 157 nm Technical Data Review, December 12-13, 2001, Orlando, Florida, USA.
4. Richard Schenker, Gary Allen, U.S. Patent Application, 2002.
5. Marc D. Levenson et al., "Phase Phirst! An improved strong-PSM paradigm," SPIE Vol. 4186, 395.
6. st Annual BACUS Symposium on Photomask Technology, Proceedings of SPIE Vol. 4562, 154.
7. st Annual BACUS Symposium on Photomask Technology, Proceedings of SPIE Vol. 4562, 183.