High precision characterisation of semiconductor bolometers

International Journal of Infrared and Millimeter Waves

Volumn 23, Issue 4, 2002, Pages 575-595

  Woodcraft, A L ^a   Sudiwala, R V ^a   Griffin, M J ^a   Wakui, E ^b   Maffei, B ^a   Tucker, C E ^a   Haynes, C V ^a   Gannaway, F ^a   Ade, P A R ^a   Bock, J J ^c   Turner, A D ^c   Sethuraman, S ^c   Beeman, J W ^d  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Bolometers; Characterisation; Cryogenic detectors; NTD; Submillimeter

Indexed keywords

ANISOTROPY; CRYOGENICS; DATA ACQUISITION; DEMAGNETIZATION; ELECTRIC RESISTANCE; LIGHT MODULATION; SPECIFIC HEAT; SPECTRUM ANALYSIS; SUBMILLIMETER WAVES; THERMAL CONDUCTIVITY; THERMAL EFFECTS; THERMISTORS;

CRYOGENIC DETECTORS; HIGH FREQUENCY INSTRUMENT (HFI); NEUTRON TRANSMUTATION DOPING (NTD);

BOLOMETERS;

EID: 11144355231     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1015757810970     Document Type: Article

References (21)

1. (Paper I) Sudiwala RV, Griffin MJ, Woodcraft AL. Thermal modelling and characterisation of semiconductor bolometers. Submitted to Int. J. Infrared. Mill. Waves 2002.
2. Richards PL. Bolometers for infrared and millimeter waves. J. App. Phys. 1994; 76:1.
3. Griffin MJ. Bolometers for far-infrared and submillimetre astronomy. Nuc. Instrum. Methods. Phys. Res. Sec. A 2000;444:397.
4. 4 micromesh absorbers. Applied Optics 1997;36:765.
5. Haller EE. Advanced far-infrared detectors. Infrared Phys. & Tech. 1994;35:127.
6. Haller EE, Itoh KM, Beeman JW. Neutron transmutation doped (NTD) germanium thermistors for sub-mm bolometer applications. Proc. 30th ESLAB Symp. "Submillimetre and Far-Infrared Space Instrumentation", 24-26 September 1996, ESA 1996;SP-388:115.
7. Mather JC. Bolometer noise: nonequilibrium theory. Applied Optics 1982; 21:1125.
8. Lamarre JM, Ade PAR, Benoît A, et al. The high frequency instrument of Planck: Design and performances. Astro. Lett and Communications 2000;37:161.
9. Mandolesi N, Villa M. FIRST/Planck mission. In V Piuri, M Savino, editors, ICMT/99. Proceedings of the 16th IEEE Instrumentation and measurement technology conference, IEEE, Piscataway, NJ, USA, volume 2.1999;975
10. Bock JJ, DelCastillo HM, Turner AD, et al. Infrared bolometers with silicon nitride micromesh absorbers. Proc. 30th ESLAB Symp. "Submillimetre and Far-Infrared Space Instrumentation", 24-26 September 1996, ESA SP-388;119.
11. Duband L, Hui L, Lange A. Thermal isolation of large loads at low temperature using Kevlar rope. Cryogenics 1993;33:643.
12. Lee C, Ade PAR, Haynes CV. Self supporting filters for compact focal plane designs. Proc. 30th ESLAB Symp. "Submillimetre and Far-Infrared Space Instrumentation", 24-26 September 1996, ESA SP-388 1996;81.
13. Maffei B, Ade PAR, Tucker CE, et al. Shaped corrugated horns for cosmic microwave background anisotropy measurements. Int. J. Infrared. Mill. Waves 2000;21:2023.
14. Woodcraft AL, Sudiwala RV, Wakui E. Measurement of anomalous resistance-temperature relation for neutron transmutation doped germanium. In. Proceedings of Low Temperature Detectors 9 (to appear). AIP 2002.
15. Soudée J, Broszkiewicz D, Giraud-Héraud Y, et al. Hot electrons effect in a #23 NTDGe sample. J. Low Temp. Phys. 1998;110:1013.
16. Grannan SM, Richards PL, Hase MK. Numerical optimization of bolometric infrared detectors including optical loading, amplifier noise, and electrical non-linearities. Int. J. Infrared. Mill. Waves 1997;18:319.
17. Hanany S. Private communication; measurements were done with A. T. Lee, B. Rabii, P. L. Richards and C. D. Winant of the MAXIMA team.
18. Pobell F. Matter and Methods at Low Temperatures. Springer, 1992.
19. Wang N, Wellstood FC, Saduolet B, et al. Electrical and thermal properties of neutron-transmutation-doped Ge at 20mK. Phys. Rev. B 1990;41:3761.
20. Zhang J, Cui W, Juda M, et al. Non-ohmic effects in hopping conduction in doped silicon and germanium between 0.05 and 1 K. Phys. Rev. B 1998:57:4472.
21. Wakui E, et al. In preparation, 2002.