Magnetoresistive tunnel junctions look ever more promising for magnetic random access memory

Physics Today

Volumn 57, Issue 12, 2004, Pages 24-27

  Levi, Barbara Goss ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELECTRONS; FERROMAGNETIC MATERIALS; GIANT MAGNETORESISTANCE; MAGNETIC DISK STORAGE; MAGNETIC FIELDS; MAGNETIC MOMENTS; RANDOM ACCESS STORAGE; SENSORS;

DENSITY OF STATES; INSULATING LAYERS; MAGNETIC TUNNEL JUNCTIONS (MTJ); TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 11144265318     PISSN: 00319228     EISSN: None     Source Type: Trade Journal    
DOI: 10.1063/1.1878325     Document Type: Review

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