Mobility and transverse electric field effects in channel conduction of wrap-around-gate nanowire MOSFETs

IEE Proceedings: Circuits, Devices and Systems

Volumn 151, Issue 5, 2004, Pages 422-430

  Sharma, A K ^a,c   Zaidi, S H ^b   Lucero, S ^a   Brueck, S R J ^c   Islam, N E ^d  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Gratings Incorporated   (United States)

^c UNIVERSITY OF NEW MEXICO   (United States)

^d UNIVERSITY OF MISSOURI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC CONDUCTANCE; ELECTRIC FIELD EFFECTS; GATES (TRANSISTOR); INTERFEROMETRY; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS;

CHANNEL CONDUCTION; CURRENT CONDUCTION PROCESS; INTERFEROMETRIC LITHOGRAPHY; NANOWIRE DEVICES;

MOSFET DEVICES;

EID: 11144239994     PISSN: 13502409     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-cds:20040993     Document Type: Article

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