SCOPUS 정보 검색 플랫폼

Volumn 227-230, Issue PART 1, 1998, Pages 176-179

High electric field hole mobility in a-Si:H

Author keywords

a Si:H; Hole mobility; Time of flight method

Indexed keywords

AMORPHOUS SILICON; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; HYDROGEN; MATHEMATICAL MODELS; THERMAL EFFECTS;

HOLE DRIFT MOBILITY;

SEMICONDUCTING SILICON;

EID: 0032065078 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00033-7 Document Type: Article

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.