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Volumn 66, Issue 1-4, 2001, Pages 361-367

Numerical modelling of trap-assisted tunnelling mechanism in a-Si:H and μc-Si n/p structures and tandem solar cells

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHARGE CARRIERS; CRYSTALLINE MATERIALS; ELECTRON TUNNELING; ENERGY GAP; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035254602     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00195-1     Document Type: Article
Times cited : (8)

References (8)
  • 6
    • 0026748006 scopus 로고
    • An examination of the 'tunnel junctions' in triple junction a-Si:H based solar cells: Modeling and effects on performance
    • J.Y. Hou, J.K. Arch, S.J. Fonash, S. Wiedeman, M. Bennett, An examination of the 'tunnel junctions' in triple junction a-Si:H based solar cells: modeling and effects on performance, 22nd IEEE PVSC Proceedings, 1991, pp. 1260.
    • (1991) 22nd IEEE PVSC Proceedings , pp. 1260
    • Hou, J.Y.1    Arch, J.K.2    Fonash, S.J.3    Wiedeman, S.4    Bennett, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.