SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 202-205

Electric field heated electrons in a-Si:H - New features

(3) Juska G a Arlauskas, K a Kocka J b

a VILNIUS UNIVERSITY (Lithuania)

b INSTITUTE OF PHYSICS (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BAND STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRONS; HEATING; HIGH TEMPERATURE EFFECTS; HOT CARRIERS; LIGHT EMISSION; PHONONS;

BAND MOBILITY; ELECTRIC FIELD HEATED ELECTRONS; ELECTRIC FIELDS DRIFT VELOCITY SATURATION; ELECTRON DRIFT MOBILITY; HYDROGENATED AMORPHOUS SILICON; OPTICAL PHONON EMISSION; SHALLOW TRAPPING; SUBNANOSECOND TIME OF FLIGHT MEASUREMENT;

ELECTRON TRANSPORT PROPERTIES;

EID: 0030563218 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(95)00687-7 Document Type: Article

Times cited : (11)

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