Three-dimensional simulation of heavy-ion induced charge collection in SiGe HBTs on SOI

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3298-3303

  Varadharajaperumal, Muthubalan ^a   Niu, Guofu ^a   Cressler, John D ^b   Reed, Robert A ^c   Marshall, Paul W ^c  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c NASA HEADQUARTERS   (United States)

Author keywords

Heterojunction bipolar transistors (HBTs); Silicon on insulator (SOI)

Indexed keywords

COLOR; COMPUTER SIMULATION; HEAVY IONS; HETEROJUNCTION BIPOLAR TRANSISTORS; PERTURBATION TECHNIQUES; SILICON COMPOUNDS;

CHARGE COLLECTION; COLLECTOR-SUBSTRATE JUNCTION; INTRINSIC EMITTERS; LOAD DEPENDENCE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 11044237515     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839144     Document Type: Conference Paper

References (9)

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