Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3585-3594

  Khanna, Shyam M ^a   Estan, Diego ^a   Houdayer, Alain ^b   Liu, Hui C ^c   Dudek, Richard ^c  

^a DEFENCE RESEARCH AND DEVELOPMENT CANADA   (Canada)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Displacement damage; GaAs; GaN; Light emitting diodes (LEDs); Low temperature; Proton; Quantum well; Radiation damage; Radiation efficiency

Indexed keywords

ARSENIC COMPOUNDS; GALLIUM COMPOUNDS; LIGHT EMISSION; PROTONS; RADIATION; RADIATION DAMAGE; RADIATION HARDENING; TEMPERATURE DISTRIBUTION;

DISPLACEMENT DAMAGE; GAAS; GAN; LOW TEMPERATURE; QUANTUM WELL; RADIATION EFFICIENCY;

LIGHT EMITTING DIODES;

EID: 11044222023     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839105     Document Type: Conference Paper

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