Experimental threshold logic implementations based on resonant tunnelling diodes

Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

Volumn 2, Issue , 2002, Pages 669-672

  Prost, W ^a   Kim, S O ^a   Glosekotter P ^b   Pacha, C ^b   Van Husen, H ^a   Reimann, T ^a   Goser, K F ^b   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLE TRANSITION LOGIC ELEMENT; BOOLEAN GATE; DESIGN AND TECHNOLOGY; FULL ADDERS; HETEROBIPOLAR TRANSISTORS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; INP MATERIAL; INPUT TERMINALS; M-TECHNOLOGIES; MONOSTABLE; NOR GATES; RESONANT TUNNELLING DIODE; THRESHOLD GATES; VERY LOW VOLTAGE;

ADDERS; FIELD EFFECT TRANSISTORS; MODULATORS; RESONANT TUNNELING; TELECOMMUNICATION NETWORKS; THRESHOLD LOGIC;

RESONANT TUNNELING DIODES;

EID: 10844282279     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICECS.2002.1046257     Document Type: Conference Paper

References (6)

1. K. Maezawa and T. Mizutani, "A New Resonant Tunneling Logic Gate Employing Monostable-Bistable Transition", Jpn. January 1993. J. Appl. Phys., Vol. 32, part 2, NO. IA/B, pp. L42 - L44.
2. T. Akeyoshi, K. Maezawa, T. Mizutani, "Weighted sum threshold logic peration of MOBILE'S (monostable-bistable transition logic element) using resonant-tunneling transistors, IEEE Electron Device Lett., vol. 14, pp. 475-477, Oct. 1993.
3. C Pacha U.Auer, C.Bunvick, P.Glosekotter, A Brennemann W.Prost, F.-J.Tegude, K.F.Goser; "Threshold Logic Circuit Design of Parallel Adders Using Resonant Tunneling Devices", IEEE Trans. Very Large Scale Integration Systems, vo1.8, no.5, pp. 558-572, 2000.
4. W.Prost, U.Auer, F.-J.Tegude, C.Pacha, K.F.Goser, G.JanRen, T. van der Roer; "Manufacturability and Robust Design of Nanoelectronic Logic Circuits based on Resonant Tunnelling Diodes", Int. J. Theor. Appl. 2000; 28537-28552
5. P. Glosekotter, W.Prost, C. Pacha, S. Kim, H. van Husen, T. Reimann, F.-J. Tegude, K.F. Goser; "Pseudo Dynamic Gate Design based on the Resonant-Tunneling-Bipolar-Transistor (RTBT) ", 32nd European Solid-state Device Research Conference (ESSDERC), Florence, Italy, Sept. 24-26,2002.
6. W. Otten, P. Glosekotter, P. Velling, A. Brennemann, W. Prost, K.F. Goser, F.-J. Tegude: "lnP-based Monolithically Integrated RTD/HBT MOBILE for Logic Circuits", Proceedings of the InP and Related Materials conference (IPRM 2001), Nara, Japan, May 2001