Pseudo dynamic gate design based on the Resonant Tunneling-Bipolar Transistor (RTBT)

European Solid-State Device Research Conference

Volumn , Issue , 2002, Pages 211-214

  Glösekötter, Peter ^a   Pacha, Christian ^a,b   Goser, Karl F ^a   Prost, Werner ^c   Kim, Samuel ^c,d   Van Husen, H ^c   Reimann, T ^c   Tegude, Franz J ^c  

^a TU DORTMUND UNIVERSITY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

^d LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

RESONANT TUNNELING; ULSI CIRCUITS;

CIRCUIT COMPLEXITY; LOGIC FUNCTIONS; MULTI-STATE; PSEUDO-DYNAMICS; RESONANT TUNNELING DEVICE; THREE-TERMINAL DEVICES; TRANSITION LOGIC; TWO TERMINALS;

LOGIC CIRCUITS;

EID: 84907707098     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2002.194907     Document Type: Conference Paper

References (9)

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