A new and simple means for self-assembled nanostructure: Facilitated by buffer layer

Journal of Physical Chemistry B

Volumn 108, Issue 49, 2004, Pages 18799-18803

  Hsu, Cheng Liang ^a,b   Yang, Shang Shian ^a,c   Tseng, Yung Kuan ^a   Chen, I Cherng ^a   Lin, Yan Ru ^a   Chang, Shoou Jinn ^b   Wu, Shinn Tyan ^c  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CATALYSIS; CATALYSTS; CRYSTAL STRUCTURE; ELECTRIC FIELD EFFECTS; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; ZINC OXIDE;

BUFFER LAYERS; METAL CATALYSTS; SELF-ASSEMBLED NANOSTRUCTURES; SEMICONDUCTOR NANOMATERIALS;

SELF ASSEMBLY;

EID: 10844276385     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp0456382     Document Type: Article

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