Circuit applications of high-performance SiGe:C HBTs integrated in BiCMOS technology

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 297-305

  Winkler, W ^a   Borngraber J ^a   Heinemann, B ^a   Rucker H ^a   Barth, R ^a   Bauer, J ^a   Bolze, D ^a   Drews, J ^a   Ehwald, K E ^a   Grabolla, T ^a   Haak, U ^a   Hoppner W ^a   Knoll, D ^a   Kruger D ^a   Kuck, B ^a   Kurps, R ^a   Marschmeyer, M ^a   Richter, H ^a   Schley, P ^a   Schmidt, D ^a   Scholz, R ^a   Tillack, B ^a   Wolansky, D ^a   Wulf, H E ^a   Yamamoto, Y ^a   Zaumseil, P ^a   more..

^a IHP   (Germany)

Author keywords

Divider; Integrated circuit; Millimeter wave; Oscillator; SiGe:C BiCMOS technology

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC NETWORK ANALYSIS; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MILLIMETER WAVES; OSCILLATORS (ELECTRONIC);

DIVIDER; SIGE:C BICMOS TECHNOLOGY;

SILICON COMPOUNDS;

EID: 10744233328     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.058     Document Type: Conference Paper

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