High-performance and low-voltage divider circuits fabricated in SiGe:C HBT technology

European Solid-State Circuits Conference

Volumn , Issue , 2002, Pages 827-830

  Winkler, W ^a   Borngraber, J ^a   Heinemann, B ^a   Weger, P ^a   Gustat, H ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIVIDER CIRCUITS; FREQUENCY DIVIDERS; HIGH DATA RATE COMMUNICATIONS; LOW-POWER OPERATION; MAXIMUM OPERATING FREQUENCY; SIGE:C BICMOS TECHNOLOGY; STATIC FREQUENCY DIVIDERS; WIRED AND WIRELESS COMMUNICATIONS;

BICMOS TECHNOLOGY; COMMUNICATION SYSTEMS; FREQUENCY DIVIDING CIRCUITS; MICROPROCESSOR CHIPS; SILICON ALLOYS; VOLTAGE DIVIDERS;

SEMICONDUCTING SILICON;

EID: 0038563618     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. B. Heinemann, et al., "Cost-effective High-performance high-voltage SiGe:C HBTs with 100GHz fT and BVCEO x fT products exceeding 220 VGHz", IEDM Technical Digest, pp.348-351, Dec. 2001.
2. A. Felder, et al.,"46 Gb/s DEMUX, 50 Gb/s MUX, and 30 GHz static frequency divider in silicon bipolar technology", IEEE J. Solid-State Circuits, vol. 31, pp. 481-486, April 1996.
3. H. Knapp, et al., "A 79GHz dynamic frequency divider in SiGe bipolar technology", ISSCC Technical Digest, pp. 208-209, 2000.
4. B. Razavi, et al., "Design techniques for lowvoltage high-speed digital bipolar circuits", IEEE J. Solid-State Circuits, vol. 29, pp. 332-339, March 1994.
5. H. Wu and A. Hajimiri, "A 19GHz 0.5mW 0.35?m CMOS Frequency divider with shunt-peaking locking-range enhancement", IEEE ISSCC Digest, 2001, pp. 412-413.