Self-Consistent Calculation of Current Self-Distribution Effect in GaAs-AlGaAs Oxide-Confined VCSELs

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1422-1430

  Osiński, Marek ^a   Smagley, Vladimir A ^a   Lu, Min ^a   Smolyakov, Gennady A ^a   Eliseev, Petr G ^a,b   Riely, Brian P ^c   Shen, Paul H ^c   Simonis, George J ^c  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Semiconductor device modeling; Semiconductor lasers; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROOPTICAL EFFECTS; HEAT SINKS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

SELF-DISTRIBUTION EFFECT; SEMICONDUCTOR DEVICE MODELING; VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL);

SOLID STATE LASERS;

EID: 10744232054     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819507     Document Type: Conference Paper

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