Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3419, Issue , 1998, Pages 196-207

  Osiński, Marek ^a   Smagley, Vladimir A ^a   Smolyakov, Gennady A ^a   Svimonishvili, Tengiz ^a   Eliseev, Petr G ^a   Simonis, George ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Control volume method; Current crowding; Intracavity contacts; Numerical simulation; Oxide confined VCSELs; Stimulated emission

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; OPTICAL WAVEGUIDES; STIMULATED EMISSION;

VERTICAL CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0032403910     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.311010     Document Type: Conference Paper

References (13)

1. Current self-distribution effect in diode lasers: Analytic criterion and numerical study
2. Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers
3. Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance
4. Optimization of 1.3-μm etched-well surface-emitting laser design
5. Spatial holeburning effects on the dynamics of vertical cavity surface-emitting laser diodes
6. Comprehensive numerical modeling of vertical cavity surface emitting lasers
7. Modeling of oxide-confined vertical-cavity surface-emitting lasers
8. Self-consistent thermal-electrical modeling of proton-implanted top-surface-emitting semi-conductor lasers
9. Electro-thermal modeling of oxide-confined vertical-cavity surface-emitting semiconductor lasers and large-size two-dimensional arrays
10. y - GaAs reflectors
11. Numerical analysis of 1.54 μm double-fused vertical-cavity lasers operating continuous-wave up to 33 °C