Development of MIM/Ta2O5 capacitor process for 0.10-μm DRAM

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 87, Issue 2, 2004, Pages 26-36

  Asano, Isamu ^a   Nakamura, Yoshitaka ^a   Hiratani, Masahiko ^b   Nabatame, Toshihide ^b   Iijima, Shinpei ^a   Saeki, Tomonori ^b   Futase, Takuya ^b   Yamomoto, Satoshi ^b   Saito, Tatsuyuki ^b   Sekiguchi, Toshihiro ^a  

^a Elpida Memory Inc   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Capacitor; DRAM; MIM; Periodic acid; Ruthenium; Tantalum nitride; Tantalum pentoxide

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; CONTAMINATION; DYNAMIC RANDOM ACCESS STORAGE; MIM DEVICES; PERMITTIVITY; RUTHENIUM; TANTALUM COMPOUNDS;

AMORPHOUS TANTALUM NITRIDE; PERIODIC ACID; STORAGE CAPACITANCE; TANTALUM PENTOXIDE;

CAPACITORS;

EID: 10744227273     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/ecjb.10111     Document Type: Article

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