Conformal ruthenium electrode for MIM capacitors in Gbit DRAMs using the CVD technology based on oxygen-controlled surface reaction

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2000, Pages 102-103

  Hiratani, Masahiko ^a   Nabatame, Toshihide ^a   Matsui, Yuichi ^a   Shimamoto, Yasuhiro ^a   Sasago, Yoshitaka ^a   Nakamura, Yoshitaka ^a   Ohji, Yuzuru ^a   Asano, Isamu ^a   Kimura, Shinichiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; MIM DEVICES; OXIDATION; REDUCTION; RUTHENIUM; SEMICONDUCTING FILMS;

METAL INSULATOR METAL (MIM) CAPACITORS;

CAPACITORS;

EID: 0033682264     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)