Isoelectronic traps in heavily doped GaAs:(In,N)

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 23, 2003, Pages

  Intartaglia, R ^a   Taliercio, T ^a   Valvin, P ^a   Gil, B ^a   Bretagnon, T ^a   Lefebvre, P ^a   Pinault, M A ^b   Tournie E ^b,c  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CNRS   (France)

^c UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM; INDIUM; NITROGEN;

ARTICLE; CHEMICAL COMPOSITION; DIPOLE; ELECTRON TRANSPORT; LOW TEMPERATURE; MOLECULAR DYNAMICS; PHONON; THEORETICAL MODEL; THERMODYNAMICS;

EID: 0842321763     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.235202     Document Type: Article

References (29)

1. M. Kondow, K. Uomi, K. Hosomi, and T. Mozume, Jpn. J. Appl. Phys., Part 2 33, L1056 (1992).
2. M. Weyers, M. Sato, and H. Ando, Jpn. J. Appl. Phys., Part 2 31, L853 (1992).
3. Steven R. Kurtz, A. A. Allerman, E. D. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, Appl. Phys. Lett. 74, 729 (1999).
4. D. J. Friedman, J. F. Geisz, S. R. Kurtz, and J. M. Olson, J. Cryst. Growth 195, 409 (1998).
5. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1221 (1999);
6. E. D. Jones, N. A. Modine, A. A. Allermann, S. R. Kurtz, A. F. Wright, S. T. Tozer, and X. Wei, Phys. Rev. B 60, 4430 (1999);
7. B. Gil, Solid State Commun. 114, 623 (2000).
8. Y. Zhang, A. Mascarenhas, H. P. Xin, and C. W. Tu, Phys. Rev. B 63, R161303 (2001).
9. P. R. C. Kent and A. Zunger, Phys. Rev. Lett. 86, 2613 (2001).
10. For a detailed review see, for instance, by E. Tournié, and B. Gil, in Low Dimensional Nitride Semiconductors, edited by B. Gil (Oxford University Press, Oxford, 2002), ISBN 0 19 850 974 X, p. 415.
11. J. P. Laurenti, K. Wolter, P. Roentgen, K. Seibert, H. Kurz, and J. Camassel, Phys. Rev. B 39, 5934 (1989).
12. D. J. Wolford and J. A. Bradley, K. Fry, and J. Thompson, in Physics of Semiconductors, edited by D. J. Chadi and W. A. Harisson (Springer, New York, 1984), p. 627
13. P. J. Dean, D. G. Thomas, and C. J. Frosch, J. Phys. C 17, 747 (1984).
14. T. N. Morgan and H. Maier, Phys. Rev. Lett. 27, 1200 (1971).
15. J. J. Hopfield, D. G. Thomas, and R. T. Lynch, Phys. Rev. Lett. 17, 312 (1966).
16. A. Baldereschi and J. J. Hopfield, Phys. Rev. Lett. 28, 171 (1972).
17. H. P. Hjalmarson, P. Vogl, D. J. Wolford, and J. D. Dow, Phys. Rev. Lett. 44, 810 (1980).
18. K. A. Mäder and A. Zunger, Phys. Rev. B 50, 17 393 (1994).
19. H. Dai, M. A. Gundersen, C. W. Myles, and P. G. Snyder, Phys. Rev. B 37, 1205 (1988).
20. L. Bellaiche, S. H. Wei, and A. Zunger, Appl. Phys. Lett. 70, 3558 (1997).
21. B. Gil, Physica B & C 146B, 84 (1987).
22. H. Mariette, Physica B & C 146B, 286 (1987).
23. B. Gil and H. Mariette, Phys. Rev. B 35, 7999 (1987).
24. B. Gil, J. Camassel, P. Merle, and H. Mathieu, Phys. Rev. B 25, 3987 (1982).
25. T. N. Morgan, B. Welber, and R. N. Bhargava, Phys. Rev. 166, 751 (1968).
26. P. J. Dean, Phys. Rev. B 4, 2596 (1971).
27. J. Leymarie, M. Leroux, and G. Neu, in Physics of Semiconductors, edited by W. Zawadzki (Institute of Physics, Polish Academy of Sciences, Warsaw, 1989), ISBN 83-00-024-654, p. 1315.
28. R. Ulbricht and C. Weisbuch, Phys. Rev. Lett. 38, 865 (1977).
29. R. Schwabe, W. Seifert, F. Bugge, R. Bindermann, V. F. Agekyan, and S. V. Pogarev, Solid State Commun. 55, 167 (1985).