Silicon damage studies due to ultra-low-energy ion implantation with heavy species and rapid thermal annealing

Materials Science in Semiconductor Processing

Volumn 3, Issue 4, 2000, Pages 291-296

  Moffatt, S ^a   Hemment, P L F ^b   Whelan, S ^c   Armour, D G ^a  

^a APPLIED MATERIALS INC   (United States)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF SALFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; ELECTRIC RESISTANCE; HIGH RESOLUTION ELECTRON MICROSCOPY; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; TRANSMISSION ELECTRON MICROSCOPY;

MEDIUM-ENERGY ION SCATTERING (MEIS); SPREADING RESISTANCE PROFILING (SRP); ULTRA-LOW-ENERGY ION IMPLANTATION;

SEMICONDUCTING SILICON;

EID: 0034240511     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00046-9     Document Type: Article

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