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Volumn , Issue , 2004, Pages 324-330

Grafting FIB "Lift-out" TEM sample for further ion milling and its application for semiconductor devices

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; GRAFTING (CHEMICAL); IMAGE QUALITY; ION BEAMS; SEMICONDUCTOR DEVICES; TUNGSTEN;

EID: 10444271065     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (11)
  • 1
    • 0000923306 scopus 로고
    • Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam
    • M.H.F. Overwijk et al, "Novel Scheme for the Preparation of Transmission Electron Microscopy Specimens with a Focused Ion Beam", J. Vacuum Science and Technology, B11 Vol. 6, (1993) p. 202.
    • (1993) J. Vacuum Science and Technology, B11 , vol.6 , pp. 202
    • Overwijk, M.H.F.1
  • 3
    • 0032970357 scopus 로고    scopus 로고
    • A review of focused ion beam milling techniques for TEM specimen preparation
    • L.A. Giannuzzi and F.A. Stevie, "A Review of Focused Ion Beam Milling Techniques for TEM Specimen Preparation", Micron Vol. 30 (1999) pp. 197-204.
    • (1999) Micron , vol.30 , pp. 197-204
    • Giannuzzi, L.A.1    Stevie, F.A.2
  • 5
    • 23044531686 scopus 로고    scopus 로고
    • A method for thinning FIB prepared TEM specimens after lift-out
    • B. Rossie, et al, "A Method for Thinning FIB Prepared TEM Specimens after Lift-out", Microscopy & Microanalysis, 2001, Vol. 7, No supp/2, pp.940.
    • (2001) Microscopy & Microanalysis , vol.7 , Issue.SUPP.-2 , pp. 940
    • Rossie, B.1
  • 6
    • 1542360101 scopus 로고    scopus 로고
    • A Methodology to reduce ion beam induced damage in TEM specimens prepared by FIB
    • Nov. Phoenix, Arizona
    • th Inter. Symp. Test. Fail. Analysis Nov. 2002, Phoenix, Arizona, pp. 313-316.
    • (2002) th Inter. Symp. Test. Fail. Analysis , pp. 313-316
    • Liu, C.K.1
  • 8
    • 0042423435 scopus 로고    scopus 로고
    • STEM scanning mode observation of semiconductor devices
    • San Antonio, TX, August
    • N. Wang et al, "STEM Scanning Mode Observation of Semiconductor Devices", Proc. Microscopy and Microanalysis 2003, San Antonio, TX, August, 2003, p. 486CD.
    • (2003) Proc. Microscopy and Microanalysis 2003
    • Wang, N.1
  • 10
    • 10444234987 scopus 로고    scopus 로고
    • Microanalysis of semiconductor devices with FIB and TEM for identifying small defects
    • ASM international, Materials Park
    • N. Wang and S. Daniel, "microanalysis of Semiconductor Devices with FIB and TEM for Identifying Small Defects", EDFA Desk Reference Book Supplement, 2002, ASM international, Materials Park, 2003.
    • (2003) EDFA Desk Reference Book Supplement, 2002
    • Wang, N.1    Daniel, S.2
  • 11
    • 1542270695 scopus 로고    scopus 로고
    • Use of STEM in nanometer level defect analysis of SRAM devices
    • Nov. Santa Clara
    • th Inter. Symp. Test. Fail. Analysis Nov. 2001, Santa Clara, pp. 313-317.
    • (2001) th Inter. Symp. Test. Fail. Analysis , pp. 313-317
    • Wang, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.