FIB chip repair: Improving success by controlling beam-induced damage and thermal / mechanical stress

Proceedings of the 30th International Symposium for Testing and Failure Analysis, ISTFA 2004

Volumn , Issue , 2004, Pages 166-171

  Herschbein, Steven ^a   Rue, Chad ^a   Scrudato, Carmelo ^a   Hermann, Edward ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; FOCUSING; ION BEAMS; PERTURBATION TECHNIQUES; RESISTORS; SEMICONDUCTING SILICON; STATIC RANDOM ACCESS STORAGE; THERMAL STRESS;

DAMAGE CONTROL; FOCUSED ION BEAMS (FIB); MECHANICAL STRESSES; MICROCHIPS;

MICROPROCESSOR CHIPS;

EID: 10444258231     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. S. Herschbein, et al, "Basic Technology & Practical Applications of the FIB for the Laboratory Workplace," Microelectronic Failure Analysis, Desk Reference, Fourth Edition (1999), pp. 517-526.
2. th ISTFA, Santa Clara, CA, Nov. 1999, pp. 247-254.
3. th IRPS, Denver, CO, April 1997, pp. 72-81.
4. th ISTFA, Dallas, TX, Nov. 1998, pp. 49-55.
5. th ISTFA, Santa Clara, CA, Nov. 2001, pp. 288-298.
6. Ziegler, J.F., et al, The Stopping and Range of Ions in Solids, Pergamon Press (New York, 1985), http://www.srim.org/.
7. th ISTFA, Los Angeles, CA, Nov. 1994, pp. 439-446.