Focused Ion Beam Irradiation Induced Damages on CMOS and Bipolar Technologies

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn , Issue , 1998, Pages 49-55

  Benbrik, J ^a   Rolland, G ^a   Perdu, P ^a   Benteo, B ^a   Casari, M ^a   Desplats, R ^a   Labat, N ^b   Touboul, A ^b   Danto, Y ^b  

^a CNES   (France)

^b UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; DIGITAL CIRCUITS; ION BEAMS; IRRADIATION; MOSFET DEVICES; PASSIVATION; SCANNING; SEMICONDUCTOR JUNCTIONS; VLSI CIRCUITS;

ELECTROSTATIC PROTECTION; FOCUSED ION BEAMS (FIB); THRESHOLD VOLTAGES;

CMOS INTEGRATED CIRCUITS;

EID: 1542301018     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. R.G. Lee and J.C Morgan, Proc. of the 17th Int. Symp. for Testing and Failure Analysis, ISTFA '91, 85-95 (1991).
2. Ann N. Campbell, Kenneth A. Peterson, Daniel M. Fleetwood, Jerry M; Soden, Proc. 35th Annual International Reliability Physics Symposium, IRPS'97, 72-81, (1997).
3. D.R. Heslinga, Proc 3rd P2ID Sym., 104-107 (1998).
4. K.G. Druijf, J.J.M. de Nijs, E. Van der Drift, Microelectronics Engineering, 22, 231-234 (1993).
5. J. DiMaria, E. Cartier, D. A. Buchanan, J. Appl. Phys. 80 (1), 1996
6. M.V. Fischetti, Z.E Weinberg J.A. Callise, J. Appl. Phys. 57 (2), 418-425, (1985).
7. G. Barbottin, A. Vapaille, Instabilities In Silicon Devices, Volume2, pp 407-536, Ed. North-Holland, (1986).