Local electronic structure around Mn and Ga in Mn-doped GaN films showing room temperature ferromagnetism

Solid State Communications

Volumn 133, Issue 3, 2005, Pages 177-182

  Sonoda, Saki ^a   Yamamoto, Yoshiyuki ^b   Sasaki, Takahiko ^c   Suga, Ken Chi ^a   Kindo, Koichi ^a   Hori, Hidenobu ^b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c CHIBA UNIVERSITY   (Japan)

Author keywords

A. Semiconductors; C. XANES; D. Electronic band structure

Indexed keywords

ANISOTROPY; CRYSTAL LATTICES; CRYSTALLOGRAPHY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; ENERGY ABSORPTION; FERMI LEVEL; FERROMAGNETISM; GALLIUM NITRIDE; MANGANESE; SYNCHROTRON RADIATION; X RAY ANALYSIS;

ELECTRON TRANSITION; ELECTRONIC BAND STRUCTURE; PARTIAL DENSITY OF STATES; X-RAY ABSORPTION NEAR EDGE STRUCTURE (XANES) ANALYSIS;

SEMICONDUCTING FILMS;

EID: 10444226655     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.10.015     Document Type: Article

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