Study of the porous polycrystalline silicon formation process

Semiconductor Science and Technology

Volumn 19, Issue 12, 2004, Pages 1343-1347

  Andrushin, S Ya ^a   Balagurov, L A ^a   Bayliss, S C ^b   Orlov, A F ^a   Petrova, E A ^a   Yarkin, D G ^a  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLINE MATERIALS; DISSOLUTION; ETCHING; GRAIN BOUNDARIES; MICROELECTRONICS; POROUS SILICON;

ELECTROCHEMICAL DISSOLUTION; POROUS POLYCRYSTALLINE; SILICON FORMATION;

POLYCRYSTALLINE MATERIALS;

EID: 10444226578     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/12/002     Document Type: Article

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