Structural change and photo-response in porous poly-Si/Si

Thin Solid Films

Volumn 358, Issue 1, 2000, Pages 259-263

  Lyou, Jonghun ^a   Yoon, Kyung Sik ^a   Kim, Eun Kyu ^c   Min, Suk Ki ^b  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC RESISTANCE; ELECTROCHEMISTRY; GRAIN BOUNDARIES; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; POLYCRYSTALLINE MATERIALS; POROUS SILICON; QUANTUM THEORY; SURFACE STRUCTURE;

CHARGE SEPARATION MODEL; QUANTUM CONFINEMENT;

THIN FILMS;

EID: 0033898330     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00715-4     Document Type: Article

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