High-field grain boundary transport in semiconducting BaTiO3 ceramics

Journal of Physics D: Applied Physics

Volumn 37, Issue 3, 2004, Pages 416-421

  Chao, Charles T ^a   Cann, David P ^a   Gall, R Bruce ^a   Palaci, Yüksel ^b  

^a Iowa State University   (United States)

^b MATERIALS INSTITUTE   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRONIC STRUCTURE; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE APPLICATIONS; INSULATING MATERIALS; LIMITERS; MICROSTRUCTURE; SEMICONDUCTOR MATERIALS; THERMIONIC EMISSION; VARISTORS;

CERAMIC THERMISTORS;

CERAMIC MATERIALS;

EID: 1042304481     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/3/019     Document Type: Conference Paper

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