Positive Temperature Coefficient of Resistivity Effect in Highly Donor-Doped Barium Titanate

Journal of the American Ceramic Society

Volumn 84, Issue 6, 2001, Pages 1273-1280

  Makovec, Darko ^a   Ule, Nina ^a   Drofenik, Miha ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM TITANATE; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN GROWTH; POSISTORS; SINTERING; TRANSMISSION ELECTRON MICROSCOPY;

DONOR CONCENTRATION;

CERAMIC MATERIALS;

EID: 0001744241     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2001.tb00828.x     Document Type: Article

References (23)

1. 3," J. Am. Ceram. Soc., 70 [5] 311-14 (1987).
2. M. Drofenik, "Initial Specific Surface Area in Grain Growth in Donor-Doped Barium Tilanate," J. Am. Ceram. Soc., 73 [6] 1587-92 (1990).
3. A. M. J. H. Seuter, "Defect Chemistry and Electrical Transport Properties of Barium Titanate," Philips Res. Rep., Suppl., 3, 1-84 (1974).
4. R. Wernicke, "The Kinetics of Equilibrium Restoration in Barium Titanate Ceramics," Philips Res. Rep., 31, 526-43 (1976).
5. S. Urek, M. Drofenik, and D. Makovec, "Sintering and Properties of Highly Donor-Doped Barium Titanate Ceramics," J. Mater. Sci., 35, 895-901 (2000).
6. S. D. Beskov, Technical Chemical Calculations; p. 242. VEB Dentcher Verlag fur Grundstoffindustrie, Leipzig, Germany, 1962.
7. C. A. Handwerker, "Diffusion Induced Grain Boundary Migration in Thin Films"; pp. 245-322 in Diffusion Phenomena in Thin Films And Microelectronic Materials, Edited by D. Gupta and P. S. Ho. Noyes Publications, Park Ridge, NJ, 1986.
8. J. H. Jeon and S. J. L. Kang, "Effect of Atmosphere on Interface Migration of Niobium-Doped Strontium Titanate during Infiltration of Oxide Melts," J. Am. Ceram. Soc., 77 [6] 1688-90 (1994).
9. 40," J. Am. Ceram. Soc., 70 [8] C-93 (1987).
10. 3 Ceramics," J. Am. Ceram. Soc., in press.
11. W. Heywang, "Barium Titanate as a Semiconductor with Blocking Layers," Solid-State Electron., 3, 51-58 (1961).
12. C. A. Kleint, U. Stuopel, and A. Rost, "X-ray Diffraction and Conductivity Investigations of Lanthanum-Doped Barium Titanate Ceramics," Phys. Status Solidi A, 115, 165-72 (1989).
13. 3 Systems," J. Solid State Chem., 129, 223-30 (1997).
14. F. D. Morrison, D. C. Sinclair, J. M. S. Skakle, and A. R. West, "Novel Doping Mechanism for Very-High-Permittivity Barium Titanate Ceramics," J. Am. Ceram. Soc., 81 [7] 1957-60 (1998).
15. H. S. Maiti and R. N. Basu, "Complex-Plane Impedance Analysis for Semiconducting Barium Titanate," Mater. Res. Bull., 21, 1107-14 (1986).
16. J. R. Macdonald, Impedance Spectroscopy; p. 27. Wiley, New York, 1987.
17. H. G. Jonker, "Some Aspects of Semiconducting Barium Titanate," Solid-State Electron., 7, 895-903 (1961).
18. J. Daniels, K. K. Hardtl, and R. Wernicke, "The PTC Effect of Barium Titanate," Philips Tech. Rev., 38 [3] 73-82 (1978/1979).
19. 3," J. Am. Ceram. Soc., 68 [10] 555-58 (1985).
20. 3 Showing Positive Temperature Coefficient of Resistance," J. Appl. Phys., 66 [8] 3850-56 (1989).
21. 3 Ceramics," J. Mater. Sci., 29, 6061-68 (1994).
22. 3," J. Am. Ceram. Soc., 48 [8] 434-35 (1965).
23. 3 Solid Solutions," J. Am. Ceram. Soc., 80 [1] 45-52 (1997).