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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 5 SUPPL. A, 1996, Pages 2745-2748

Influence of manganese on the room-temperature resistivity of lanthanum-doped BaTiO3

(3) Chen, Ying Chung a Lo, Gun Man a Su, Ming Yuan a

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

BaTiO3 PTCR; Effective donor concentration (Neff); Grain growth inhibition effect; Semiconductivity; Surface charge density (Ns)

Indexed keywords

CARRIER CONCENTRATION; DOPING (ADDITIVES); EFFECTS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; GRAIN GROWTH; IONS; MANGANESE; SEGREGATION (METALLOGRAPHY); SURFACE PROPERTIES; THERMAL EFFECTS;

ACCEPTOR LEVELS; GRAIN GROWTH INHIBITION; MANGANESE IONS; ROOM TEMPERATURE RESISTIVITY; SURFACE CHARGE DENSITY;

BARIUM COMPOUNDS;

EID: 0030141921 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.2745 Document Type: Article

Times cited : (8)

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