Properties of GaAs/Si heterostructure material fabricated by low temperature wafer bonding using a spin-on-glass intermediate layer

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 2002, Pages 125-128

  Deligeorgis, George ^a   Gallis, Spyros ^a   Androulidaki, Maria ^a   Cengher, Dorin ^a   Hatzopoulos, Zaharias ^a   Alexe, Marin ^b   Dragoi, Viorel ^b   Kyriakis Bitzaros, Efstathios D ^c   Halkias, George ^c   Peiro, Francisca ^d   Georgakilas, Alexandros ^a  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c INSTITUTE OF MICROELECTRONICS   (Greece)

^d UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CMOS INTEGRATED CIRCUITS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ARSENIDE FILMOIL; LOW TEMPERATURE WAFER BONDING; PHOTOLUMINESCENCE MEASUREMENT; PHOTOREFLECTANCE MEASUREMENT;

HETEROJUNCTIONS;

EID: 1042289172     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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