Microstructure of N+ ion beam induced epitaxial crystallized Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 313-317

  Sahoo, P K ^a   Gupta, S ^a   Pradhan, A ^a   Kulkarni, V N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

IBIEC; Ion implantation; Raman spectroscopy; RBS C; Si; TEM

Indexed keywords

CHEMICAL BONDS; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; ION BEAMS; MICROSTRUCTURE; POSITIVE IONS; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON VOLT ENERGY; ION MASS;

CRYSTALLINE MATERIALS;

EID: 1042288882     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.053     Document Type: Conference Paper

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