Activation energies for light ions in ion beam induced epitaxial crystallization

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 370-374

  Kinomura, A ^a   Chayahara, A ^a   Tsubouchi, N ^a   Horino, Y ^a   Williams, J S ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Activation energy; Epitaxy; IBIEC; Light ion

Indexed keywords

ACTIVATION ENERGY; BORON; CARBON; CRYSTAL DEFECTS; CRYSTALLIZATION; EPITAXIAL GROWTH; ION BEAMS; OXYGEN; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION (IBIEC);

SEMICONDUCTING SILICON;

EID: 0033513889     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00770-8     Document Type: Article

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