Effect of polarization on two-dimensional carrier distribution in nitride quantum wells

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 25, Issue 4, 2005, Pages 449-455

  Lahiri, Bidisha ^a   Datta, Reshmee ^a   Kundu, Sudakshina ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

Compound semiconductor (nitrides); Modeling; Nanostructure; Self consistent calculation

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER DISTRIBUTION; COMPOUND SEMICONDUCTOR (NITRIDES); MODELING; SELF-CONSISTENT CALCULATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 10044263200     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.07.014     Document Type: Article

References (20)

1. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Phys. Status. Solidi. A 200 (1) (2003) 3.
2. J.M. Barker, R. Akis, T.J. Thornton, D.K. Ferry, S.M. Goodnick, Phys. Status. Solidi. A 190 (2002) 263.
3. D. Jena, A.C. Gossard, U.K. Mishra, J. Appl. Phys. 88 (8) (2000) 4734.
4. L. Hsu, W. Walukiewicz, J. Appl. Phys. 89 (3) (2001) 1783.
5. X.Q. Shen, T. Ide, M. Shimizu, F. Sasaki, H. Okumura, Phys. Status Solidi. B 228 (1) (2001) 99-102.
6. F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. 56 (1997) R10024.
7. F. Bernardini, V. Fiorentini, Phys. Status Solidi A. 190 (2002) 65-73.
8. R. Cingolani, A. Botchkarev, H. Tang, H. Morkoc, G. Traetta, G. Coli, M. Lomascolo, A. Di Carlo, F. Della Salla, P. Lugli, Phys. Rev. B 61 (4) (2000) 2711.
9. K.S. Lee, D.H. Yoon, S.B. Bae, M.R. Park, G.H. Kim, ETRL J 24 (4) (2002) 270.
10. G. Bastard, E.E. Mendez, L.L. Chang, L. Esaki, Phys. Rev. 828 (1983) 3241.
11. S. Kundu, D. Biswas, R. Datta, J. Appl. Phys. 81 (4) (1997).
12. B.R. Nag, Physics of Quantum Well Devices, Kluwer Academic Publishers, Dordrecht, The Neatherlands, 2000.
13. M. Stutzmann, O. Ambacher, M. Eichoff, U. Karrer, A. Lima Pimenta, R. Neurberger, J. Schalwig, R. Dimitrov, P.J. Schuck, R.D. Grober, Phys. Status. Solidi B 228 (2) (2001) 505.
14. B.Gil (Ed.), Low Dimensional Nitride Semiconductors; Oxford Science Publications, Oxford, 2002.
15. A. Hangleiter, J.S. Im, H. Kollmer, S. Heppel, J. Off, F. Scholz, MRS Internet. Jr: Nitride. Semicon. Res 3 (15) (1998).
16. S.H. Park, D. Ahn, T. Lee, Jpn. J. Appl. Phys 40 (2001) L9414.
17. M.S. Shur, M.A. Khan, MRS. Bull 22 (2) (1997) 44.
18. M. Fanciulli, T. Lei, T.D. Moustakas, Phys. Rev. B 48 (1993) 15144.
19. V.W.L. Chin, T.L. Tansley, T. Osotchan, J. Appl. Phys 75 (1994) 7365.
20. S.N. Mohammad, H. Morkoc Prog. Quant. Electron 20 (1996) 361.