Investigation of Pt/Si/CeO2/Pt MOS device structure by impedance spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 699, Issue , 2002, Pages 173-183

  Lappalainen, Jyrki ^a,b   Kek, Darja ^a,c   Tuller, Harry L ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b UNIVERSITY OF OULU   (Finland)

^c JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE MEASUREMENT; CERIUM COMPOUNDS; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC IMPEDANCE MEASUREMENT; PLATINUM; PULSED LASER DEPOSITION; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SPECTROSCOPY; VOLTAGE MEASUREMENT;

CERIUM DIOXIDE; IMPEDANCE SPECTROSCOPY;

MOS CAPACITORS;

EID: 0036389968     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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