Dark properties and transient current response of Si0.95Ge 0.05 n+p devices

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 518, Issue 1-2, 2004, Pages 373-375

  Ruzin, Arie ^a   Marunko, S ^a   Abrosimov, N V ^b   Riemann, H ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Detectors; Pin devices; Si; SiGe; TCT

Indexed keywords

ABSORPTION; CARRIER CONCENTRATION; GAMMA RAYS; PHOTONS; RADIATION DETECTORS; SINGLE CRYSTALS; SUPERCOOLING; THERMAL EFFECTS; X RAY ANALYSIS;

PIN DEVICES; SIGE; TRANSIENT CURRENT TECHNIQUE (TCT);

SILICON;

EID: 0942299034     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.025     Document Type: Conference Paper

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