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Volumn 261, Issue 1-2, 1995, Pages 192-201
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Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature
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Author keywords
Chemical vapour deposition; Plasma processing and deposition; Silicon carbide; Surface stress
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Indexed keywords
ANNEALING;
BONDING;
CHEMICAL VAPOR DEPOSITION;
CROSSLINKING;
HYDROGEN;
ION BOMBARDMENT;
OPTICAL PROPERTIES;
PLASMA APPLICATIONS;
SILICON CARBIDE;
STRESSES;
STRUCTURE (COMPOSITION);
THERMAL EFFECTS;
ANNEALING EFFECTS;
BONDING STRUCTURE;
HYDROGEN CONTENT;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMA PROCESSING;
SURFACE STRESS;
THIN FILMS;
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EID: 0029322995
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(94)06473-3 Document Type: Article |
Times cited : (38)
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References (56)
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