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Volumn 261, Issue 1-2, 1995, Pages 192-201

Annealing effects on a-SiC:H and a-SiC:H(F) thin films deposited by PECVD at room temperature

Author keywords

Chemical vapour deposition; Plasma processing and deposition; Silicon carbide; Surface stress

Indexed keywords

ANNEALING; BONDING; CHEMICAL VAPOR DEPOSITION; CROSSLINKING; HYDROGEN; ION BOMBARDMENT; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SILICON CARBIDE; STRESSES; STRUCTURE (COMPOSITION); THERMAL EFFECTS;

EID: 0029322995     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(94)06473-3     Document Type: Article
Times cited : (38)

References (56)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.