Structure characteristic of buried SiC layers

Thin Solid Films

Volumn 368, Issue 2, 2000, Pages 241-243

  Yan, Hui ^a   Wang, Bo ^a   Song, Xuemei ^a   Chen, Guanghua ^a   Wong, S P ^b   Kwok, R W M ^b  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL STRUCTURE; CRYSTALLIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION IMPLANTATION; OXIDATION; PHASE TRANSITIONS; SILICA; SILICON CARBIDE; SILICON WAFERS;

AMORPHOUS SILICON CARBIDE; BURIED SILICON CARBIDE LAYERS; CUBIC SILICON CARBIDE; METAL VAPOR VACUUM ARC ION SOURCE;

THIN FILMS;

EID: 0033685920     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00773-2     Document Type: Article

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