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Volumn 39, Issue 1, 2004, Pages 242-245

A fully integrated inductor-based 1.8-6-V step-up converter

Author keywords

Charge pump; Flas memories; Integrated inductor model; Step up converter

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CONVERTERS; ELECTRIC INDUCTORS; ELECTRIC POWER SUPPLIES TO APPARATUS; FLASH MEMORY;

EID: 0742321269     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.820859     Document Type: Article
Times cited : (46)

References (5)
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  • 2
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    • A manufacturable copper/low-k SiO/SiCN process technology for 90nm-node high performance eDRAM
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    • Proc. IEEE Int. Interconnect Technology Conf. (IITC), 2002 , pp. 15-17
    • Higashi, K.1
  • 3
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    • Kirk, B.1
  • 4
    • 0742275184 scopus 로고    scopus 로고
    • Simple accurate expressions for planar spiral inductances
    • May
    • S. Sunderarajan et al., "Simple accurate expressions for planar spiral inductances," IEEE J. Solid-State Circuits, vol. 34, pp. 743-752, May 1998.
    • (1998) IEEE J. Solid-State Circuits , vol.34 , pp. 743-752
    • Sunderarajan, S.1
  • 5
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    • Power efficient charge pump in deep submicron standard CMOS technology
    • June
    • R. Pelliconi et al., "Power efficient charge pump in deep submicron standard CMOS technology," IEEE J. Solid-State Circuits, vol. 38, pp. 1068-1071, June 2003.
    • (2003) IEEE J. Solid-State Circuits , vol.38 , pp. 1068-1071
    • Pelliconi, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.