A grounded coplanar waveguide with a metallized silicon cavity fabricated by front-surface-only processes

Sensors and Actuators, A: Physical

Volumn 111, Issue 1, 2004, Pages 129-134

  Yoshida, Yukihisa ^a   Nishino, Tamotsu ^b   Jiao, Jiwei ^a,c   Lee, Sang Seok ^a   Suehiro, Yoshiyuki ^a   Miyaguchi, Ken'ichi ^b   Fukami, Tatsuya ^a   Kimata, Masafumi ^a   Ishida, Osami ^b  

^a Advanced Technology R and D Center   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Grounded coplanar waveguide; Membrane; Metallized silicon cavity; RF MEMS

Indexed keywords

COMPUTER SIMULATION; ELECTRIC LINES; ELECTROPLATING; ESTIMATION; ETCHING; INSERTION LOSSES; METALLIZING; MICROELECTROMECHANICAL DEVICES; PHOTORESISTS; SILICON WAFERS; SPURIOUS SIGNAL NOISE; SPUTTERING;

DIELECTRIC MEMBRANES; GROUNDED COPLANAR WAVEGUIDES (GCPW); METALLIZED SILICON CAVITY; RF-MEMS;

WAVEGUIDES;

EID: 0442327434     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2003.10.011     Document Type: Conference Paper

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