Prediction of CMOS APS design enabling maximum photoresponse for scalable CMOS technologies

IEEE Transactions on Electron Devices

Volumn 51, Issue 2, 2004, Pages 285-288

  Shcherback, Igor ^a   Yadid Pecht, Orly ^a  

^a BEN GURION UNIVERSITY OF THE NEGEV   (Israel)

Author keywords

CMOS active pixel sensor (APS); Modeling; Photoresponse; Technology scaling

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; EXTRAPOLATION; IMAGE SENSORS; MATHEMATICAL MODELS; OPTIMIZATION; PHOTODIODES;

ACTIVE PIXEL SENSOR; PHOTORESPONSE; TECHNOLOGY SCALING;

INTEGRATED CIRCUIT LAYOUT;

EID: 0442279714     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.821882     Document Type: Article

References (5)

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4. H. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 43, pp. 2131-2142, Dec. 1996.
5. T. Lule, S. Benthien, H. Keller, F. Mutze, P. Rieve, K. Seibel, M. Sommer, and M. Bohm, "Sensitivity of CMOS based imagers and scaling perspectives," IEEE Trans. Electron Devices, vol. 47, pp. 2710-2122, Nov. 2000.