Co-doping of diamond with boron and sulfur

Journal of Materials Science

Volumn 39, Issue 3, 2004, Pages 1135-1137

  Rong Bin, Li ^a   Xiao Jun, Hu ^a   He Sheng, Shen ^a   Xian Chang, He ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACETONE; AUGER ELECTRON SPECTROSCOPY; BORON; CRYSTAL LATTICES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; ION IMPLANTATION; NITROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SULFUR;

ELECTRONIC LEVELS; THERMAL ACTIVATION;

DIAMOND FILMS;

EID: 0442278376     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSC.0000012963.04082.a1     Document Type: Conference Paper

References (12)

1. M. N. LATTO, D. J. RILEY and P. W. MAY, Diamond Relat. Mater. 9 (2000) 1181.
2. S. KOIZUMI, T. TERAJI and H. KANDA, ibid. 9 (2000) 935.
3. A. REZNIK, C. UZAN-SAUGY and R. KALISH, ibid. 7 (1998) 540.
4. M. HASEGAWA, D. TAKEUCHI, S. YAMANAKA and M. OGURA, Jpn. J. Appl. Phys. Part 2 38 (1999) L1519.
5. M. NISHITANI-GAMO, C. XIAO and Y. ZHANG, Thin Solid films 382 (2001) 113.
6. T. ALBU, A. B. ANDERSON and J. C. ANGUS, J. Electrochem. Soc. 149 (2002) E143.
7. A. B. ANDERSON, E. J. GRANTSCHAROVA and J. C. ANGU, Phys. Rev. B 54 (1996) 14341.
8. J. H. WON, A. HATTA, H. YAGYU, N. JIANG, Y. MORI, T. SASAKI and A. HIRAKI, Appl. Phys. Lett. 68 (1996) 2822.
9. S. BHATTACHARYYA, O. AUCIELLO, J. BIRRELL et al., ibid. 79 (2001) 1441.
10. M. KAUKONEN, P. K. SITCH, G. JUNGNICKEL, R. M. NIEMINEN, SAMI POYKKO, D. POREZAG and TH. FRAUENHEIM, Phys. Rev. B 57 (1998) 9965.
11. S. GUPTA, B. L. WEISS, B. R. WEINER and G. MORELL, Appl. Phys. Lett. 79 (2001) 3446.
12. R. E. SHRODER, R. J. NEMANICH and J. T. GLASS, Phys. Rev. B 41 (1990) 3787.