Effects of STI-fill thickness on the CMP process defects

Microelectronic Engineering

Volumn 71, Issue 2, 2004, Pages 209-214

  Seo, Yong Jin ^a   Kim, Gi Uk ^a   Lee, Woo Sun ^b  

^a Daebul University   (South Korea)

^b Chosun University   (South Korea)

Author keywords

Chemical mechanical polishing; Nitride residue; Shallow trench isolation; Torn oxide defect; Within wafer non uniformity

Indexed keywords

CHEMICAL VAPOR DEPOSITION; NITRIDES; OXIDATION; REACTIVE ION ETCHING; SILICON WAFERS; SLURRIES; SURFACE ROUGHNESS;

SHALLOW TRENCH ISOLATION (STI); TORN OXIDE DEFECT; WAFER NONUNIFORMITY;

CHEMICAL MECHANICAL POLISHING;

EID: 0348231888     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.11.005     Document Type: Article

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