A study on the reproducibility of HSS STI-CMP process for ULSI applications

Microelectronic Engineering

Volumn 66, Issue 1-4, 2003, Pages 480-487

  Jeong, So Young ^a   Kim, Sang Yong ^b   Seo, Yong Jin ^a  

^a Daebul University   (South Korea)

^b ANAM Semiconductor Co Inc   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); High selectivity slurry (HSS); Reliability; Reproducibility; Shallow trench isolation (STI)

Indexed keywords

ETCHING; OXIDATION; PROCESS CONTROL; SILICON NITRIDE; ULSI CIRCUITS;

HIGH SELECTIVITY SLURRY (HSS);

CHEMICAL MECHANICAL POLISHING;

EID: 0344059204     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00931-0     Document Type: Conference Paper

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