Numerical Simulation of the Temperature Dependence of the Ionization Energy of Hydrogen-Like Impurities in Semiconductors: Application to Transmutation-Doped Ge : Ga

Physics of the Solid State

Volumn 45, Issue 11, 2003, Pages 2053-2059

  Poklonskii N A ^a   Vyrko, S A ^a   Zabrodskii A G ^b   Egorov, S V ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348218916     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1626737     Document Type: Article

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