Electrostatic model of the energy gap between Hubbard bands for boron atoms in silicon

Semiconductors

Volumn 33, Issue 4, 1999, Pages 391-393

  Poklonskii N A ^a   Syaglo, A I ^a  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

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[No Author keywords available]

Indexed keywords

EID: 0033115546     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187700     Document Type: Article

References (21)

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