Leakage current observation on irregular local PN junctions forming the tail distribution of DRAM retention characteristics, with new test structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 153-156

  Ueno, S ^a   Yamashita, T ^a   Oda, H ^a   Komori, S ^a   Inoue, Y ^a   Nishimura, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; ELECTRON TRAPS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR STORAGE; THERMIONIC EMISSION;

KINK PHENOMENA;

SEMICONDUCTOR JUNCTIONS;

EID: 0032277979     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1998.746305     Document Type: Conference Paper

References (6)